Dresden 2017 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 6: 2D Materials Beyond Graphene I (jointly with O)
DS 6.7: Vortrag
Montag, 20. März 2017, 12:00–12:15, REC/PHY C213
Chemical and Electronial Repair of Defective MoS2 Monolayers Through Thiols- — •Anja Förster1,2, Sibylle Gemming3,4, Gotthard Seifert2, and David Tománek1 — 1Physics and Astronomy Department, Michigan State Unversity, East Lansing, Michigan 48824, USA — 2TU Dresden, Center for Advancing Electronics Dresden (cfaed), 01062 Dresden, Germany — 3Institute of Ion Beam Physics and Material Research, Helmholtz-Zentrum Dresden Rossendorf, Center for Advancing Electronics Dresden (cfaed), Bautzner Landstr. 400, 01328 Dresden, Germany — 4Insitute of Physics, TU Chemnitz, 09107 Chemnitz, Germany
Molybdenum disulfide (MoS2) monolayers are promising candidates for new low-power electronic circuits and sensors. In order to ensure their usability for mass-production, it is necessary to heal the defects that significantly affect the electronic properties of MoS2.
For this purpose, we focus on two defect types: sulfur mono-vacancies and sulfur-adatoms. We show their effect on the density of states (DOS) of MoS2 and show how thiols can be used to heal these defects.
In detail, the sulfur mono-vacancies introduce defective states near the Fermi-energy to the DOS of MoS2. Thiols are able to cure those defective states by re-inserting the missing sulfur atoms.
In the case of sulfur adatoms, the Fermi-level of MoS2 is shifted by 0.7 eV, bring the conducting band very close to ther Fermi-energy. Thiols are able to remove the sulfur adatoms by forming hydrogen sulfide and disulfides. The latter are adsorbed on the MoS2 surface.