Dresden 2017 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 9: Transport: Graphene and Carbon Nanostructures (jointly with HL/MA/TT)

DS 9.4: Vortrag

Montag, 20. März 2017, 15:45–16:00, HSZ 204

Electron-electron interaction correction to tunneling in graphene-graphene nanojunctions — •Matthias Popp, Ferdinand Kisslinger, and Heiko B. Weber — Lehrstuhl für Angewandte Physik, FAU Erlangen-Nürnberg (FAU), Erlangen, Germany.

In weakly disordered conductors, electron-electron interaction is expected to provide a zero-bias anomaly in tunneling characteristics [1]. This purely electronic effect is seemingly suppressed in scanning tunneling spectroscopy experiments on graphene due to momentum mismatch, which requires phonon assisted tunneling. [2,3]. In order to overcome this limitation, we fabricate in-plane graphene-graphene nanojunctions by an electro burning process using epitaxial graphene on SiC as starting material. In some junctions with an overall conductance of about e2/h we indeed observed a zero-bias anomaly at low temperatures which follows the logarithmic scaling characteristics predicted by Altshuler and Aronov. These experiments offer the opportunity to study the nonlocal aspects of electron tunneling via manipulation of the environment.

[1] Altshuler, B. L. and Aronov, A. G., Electron-Electron Interaction in Disordered Conductors, 1985

[2] Brar, V. W. et al., Applied Physics Letters, 2007, 91, 122102

[3] Zhang, Y. et al., Nature Physics, 2008, 4, 627-630

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