Dresden 2017 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 10: Semiconductor Lasers I
HL 10.10: Vortrag
Montag, 20. März 2017, 12:15–12:30, POT 06
Analysis of ultra-low threshold lasing from a nanobeam laser with a quantum-well gain material — •Frederik Lohof1, Stephan Jagsch2, Noelia Vico Triviño3, Gordon Callsen2, Stefan Kalinowski2, Ian Rousseau3, Jean-François Carlin3, Raphaël Butté3, Axel Hoffmann2, Nicolas Grandjean3, Frank Jahnke2, Stephan Reitzenstein1, and Christopher Gies1 — 1Institute for Theoretical Physics, University of Bremen, Germany — 2Institute of Solid State Physics, Technische Universität Berlin, Germany — 3Institute of Physics, École Polytechnique Féderal de Lusanne, Switzerland
The ongoing quest for miniaturization of laser structures is a driving factor in applied semiconductor physics. Cavities with large Q factors and low mode volume strongly funnel the emission into the laser mode, thereby approaching the thresholdless regime (β ≈ 1). A recent addition are nanobeam cavities that offer great potential for silicon-integrated nanophotonics and on-chip structures. For such a design we develop and evaluate a quantum-mechanical laser theory that facilitates quantitative predictions of the emission output and the autocorrelation function g(2). Our device uses a quantum-well gain material. While typical QW edge-emitting lasers operate with β<10−3, the nanobeam cavity exhibits high β and vanishing threshold in the emission output, in which case g(2) has become an established tool to identify lasing. Building on a formalism employed for high-Q quantum-dot nanolasers, we calculate g(2) for a QW gain material to reveal the laser transition and to evaluate device characterisitics.