Dresden 2017 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 25: Poster: Nitrides

Montag, 20. März 2017, 15:00–19:00, P2-OG2

15:00 HL 25.1 In-situ metal deposition for low contact resistance on n-type ZnSe — •Johanna Janßen, Torsten Rieger, Arne Hollmann, Lars Schreiber, and Alexander Pawlis
  15:00 HL 25.2 The contribution has been moved to HL 63.81.
15:00 HL 25.3 Optical and magnetic studies of MBE-grown ferromagnetic CrSe and CrS layers in zincblende structure — •Johannes Röder, Richard T Moug, Kevin A Prior, Dana Vieweg, Hans-Albrecht Krug von Nidda, Alois Loidl, and Wolfram Heimbrodt
15:00 HL 25.4 Characterization of epitaxial graphene nanoribbons (GNR) — •Jantje Schommartz, Talieh Ghiasi, Alexey Kaverzin, Johannes Aprojanz, Christoph Tegenkamp, and Bart J. van Wees
15:00 HL 25.5 Ab initio metal-insulator transition in doped siliconEdoardo G. Carnio, Nicholas D. M. Hine, and •Rudolf A. Römer
15:00 HL 25.6 In-situ monitoring of opto-coupler degradation during high energy proton irradiation — •Heinz-Christoph Neitzert, Carmine Pellegrino, Giovanni Landi, Sophie Seidel, Jürgen Bundesmann, and Andrea Denker
15:00 HL 25.7 CW and Pulsed mode Characterization of LED — •Laveen P. Selvaraj, Thomas Hünnerkopf, Matthias Wachs, and Ulrich T. Schwarz
15:00 HL 25.8 Ohmic V-based contacts on n-Al0:8Ga0:2N for deep UV LEDs — •Luca Sulmoni, Martin Guttmann, Johannes Enslin, Christian Kuhn, Frank Mehnke, Tim Wernicke, and Michael Kneissl
15:00 HL 25.9 Influence of p-AlGaN superlattice and quantum barrier composition on electro-optical characteristics of UVC-LEDs — •Pascal Röder, Christian Kuhn, Sylvia Hagedorn, Arne Knauer, Tim Wernicke, Markus Weyers, and Michael Kneissl
15:00 HL 25.10 Simulation of the temporal behavior of LEDs during fast modulation — •Dominic Kunzmann and Ulrich T. Schwarz
  15:00 HL 25.11 The contribution has been withdrawn (duplicate of HL 25.7).
15:00 HL 25.12 Investigation of crystal properties of epitaxially grown BAlN layers with boron content in the lower percentage range — •Jan-Patrick Scholz, Sebastian Bauer, Oliver Rettig, Yueliang Li, Haoyuan Qi, Johannes Biskupek, Ute Kaiser, Ferdinand Scholz, and Klaus Thonke
15:00 HL 25.13 Photoluminescence Pumping Characteristics in Ga(N,As,P) /(B,Ga)(As,P) Heterostructures — •Florian Dobener, Robin C. Döring, Peter Ludewig, Wolfgang Stolz, and Sangam Chatterjee
15:00 HL 25.14 Conoscopic Investigation of Birefringence in GaN Samples — •Lukas Uhlig, Ines Trenkmann, Matthias Wachs, and Ulrich T. Schwarz
15:00 HL 25.15 Investigation of electrical conduction mechanisms in Si-doped GaN — •Stefan Kammer, Klaus Irmscher, Frank Mehnke, Tim Wernicke, Johannes Enslin, Norman Susilo, Martin Guttmann, Luca Sulmoni, Matthias Bickermann, and Michael Kneissl
15:00 HL 25.16 Determination of threading dislocation density of AlN on sapphire substrates by X-ray diffraction — •Daniel Pacak, Johannes Enslin, Tim Wernicke, Sylvia Hagedorn, Arne Knauer, Carsten Hartmann, Heike Oppermann, Markus Weyers, and Michael Kneissl
15:00 HL 25.17 Light extraction in UVC LEDs grown on ELO AlN/sapphire templates — •Sarina Graupeter, Martin Guttmann, Frank Mehnke, Christian Kuhn, Tim Wernicke, Mickael Lapeyrade, Arne Knauer, Sven Einfeldt, Markus Weyers, and Michael Kneissl
15:00 HL 25.18 Investigation of AlGaN multiple quantum wells for deep ultraviolet emission using temperature and excitation power density dependent photoluminescence spectroscopyChristoph Reich, •Baran Avinc, Johannes Enslin, Norman Susilo, Christian Kuhn, Tim Wernicke, and Michael Kneissl
15:00 HL 25.19 Impact of a SiN surface layer on the core-shell growth of InGaN quantum wells around GaN microrods — •Christian Tessarek, Stefanie Rechberger, Christel Dieker, Martin Heilmann, Erdmann Spiecker, and Silke Christiansen
15:00 HL 25.20 The effective potential energy drop as a control parameter for the sheet carrier density of two-dimensional electron gases in AlGaN/GaN heterostructures — •Dennis Mauch, Heiko Bremers, Uwe Rossow, and Andreas Hangleiter
15:00 HL 25.21 Formation of I2-type basal-plane stacking faults in In0.25Ga0.75N multiple quantum wells grown on a (10-11) semipolar GaN template — •yueliang li, haoyuan qi, tobias meisch, matthias hocker, klaus thonke, ferdinand scholz, and ute kaiser
15:00 HL 25.22 Epitaxial growth and characterization of thin AlBGaN layers with low boron content — •Natja Steiger, Jan-Patrick Scholz, Sebastian Bauer, Oliver Rettig, Tomáš Hubáček, Haoyuan Qi, Yueliang Li, Johannes Biskupek, Ute Kaiser, Ferdinand Scholz, and Klaus Thonke
15:00 HL 25.23 Angular dependence of the Raman scattering intensity of optical phonons in wz-GaN — •Simon Brehm, Christian Röder, Cameliu Himcinschi, and Jens Kortus
15:00 HL 25.24 Optical biosensing with InGaN/GaN quantum wells — •Benedikt Hörbrand, Sabyasachi Chakrabortty, Martin Schneidereit, Dominik Heinz, Sebastian Bauer, Florian Huber, Tanja Weil, Ferdinand Scholz, and Klaus Thonke
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DPG-Physik > DPG-Verhandlungen > 2017 > Dresden