Dresden 2017 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 25: Poster: Nitrides
HL 25.12: Poster
Monday, March 20, 2017, 15:00–19:00, P2-OG2
Investigation of crystal properties of epitaxially grown BAlN layers with boron content in the lower percentage range — •Jan-Patrick Scholz1, Sebastian Bauer1, Oliver Rettig2, Yueliang Li3, Haoyuan Qi3, Johannes Biskupek3, Ute Kaiser3, Ferdinand Scholz2, and Klaus Thonke1 — 1Institute of Quantum Matter / Semiconductor Physics Group, Ulm University, 89081 Ulm, Germany — 2Institute of Optoelectronics, Ulm University, 89081 Ulm, Germany — 3Central Facility of Electron Microscopy, Ulm University, 89081 Ulm, Germany
AlGaN based UV-LEDs development is currently in progress. These LEDs still suffer from low external quantum efficiencies. One of the major problems is the high amount of threading dislocations, which emerge mostly due to the lattice mismatch of AlGaN layers on AlN.
Wurtzite BN is expected to have a smaller lattice constant than AlN, what helps to compensate the increase of the lattice constant when adding gallium to AlN.
First samples of AlBN layers on AlN substrate show a big change in surface morphology and luminescence properties: Typically columnar growth is found, and the surface roughness increases. We show cross section TEM micrographs to reveal details about the growth mode. According to SIMS, ~5% boron are incorporated in the AlBN layers.