Dresden 2017 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 25: Poster: Nitrides
HL 25.13: Poster
Monday, March 20, 2017, 15:00–19:00, P2-OG2
Photoluminescence Pumping Characteristics in Ga(N,As,P) /(B,Ga)(As,P) Heterostructures — •Florian Dobener1, Robin C. Döring1, Peter Ludewig2, Wolfgang Stolz1, 2, and Sangam Chatterjee3 — 1Faculty of Physics and Materials Science Center, Philipps-Universität Marburg, D-35032 Marburg, Germany — 2NAsPIII/V GmbH, Am Knechtsacker 19, D-35041 Marburg, Germany — 3Institute of Experimental Physics I, Justus-Liebig-University Giessen, D-35392 Gießen, Germany
The realization of monolithically integrated on-chip laser sources for optical data transmission remains one of the major goals of optoelectronic integration nowadays. The quaternary III-V material system Ga(N,As,P) promises to fulfil this task - as composition variations allow both, bandgap engineering and tuning of the lattice constant to the one of Si through the control of nitrogen and phosphorous incorporation, potentially covering the near-infrared regime as well as the telecom wavelength.
Here, we investigate a series of Ga(N,As,P) multiple quantum well samples grown by MOVPE. The well thickness is varied between 1.5 and 9.9 nm. The bandgaps of the quantum-well material and of the barriers are determined by means of wavelength-modulation spectroscopy. Furthermore, photoluminescence excitation experiments reveal which of the layer contributes to the optical emission process. Thereby, some restrictions to the excited carrier injection from the (B,Ga)(As,P) barrier to the Ga(N,As,P) quantum well layer are found depending on the quantum well thickness.