Dresden 2017 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 25: Poster: Nitrides
HL 25.19: Poster
Monday, March 20, 2017, 15:00–19:00, P2-OG2
Impact of a SiN surface layer on the core-shell growth of InGaN quantum wells around GaN microrods — •Christian Tessarek1,2, Stefanie Rechberger3, Christel Dieker3, Martin Heilmann2, Erdmann Spiecker3, and Silke Christiansen1,2,4 — 1Helmholtz-Zentrum Berlin für Materialien und Energie GmbH — 2Max-Planck-Institut für die Physik des Lichts, Erlangen — 3Friedrich-Alexander-Universität Erlangen-Nürnberg, Institut für Mikro- und Nanostrukturforschung & Center for Nanoanalysis and Electron Microscopy (CENEM) — 4Physics Department, Freie Universität Berlin
GaN microrods were grown by metal-organic vapor phase epitaxy (MOVPE) using a self-catalyzed and Si-induced growth mode [1]. Spontaneous formation of SiN on the surface of microrods leads to enhanced vertical growth due to the antisurfactant and stabilization effect of SiN [2]. Core-shell growth of InGaN multiple quantum wells with GaN barriers is carried out on microrods with different growth times and thus different heights. Microrods with a short growth time are completely covered with an InGaN shell. For microrods with an extended height the InGaN shell only forms at the upper part leaving the lower part free of any deposition. Based on structural investigations including transmission electron microscopy a growth model will be proposed to explain this behaviour. Furthermore, optical properties of the different core-shell structures will be discussed.
[1] C. Tessarek et al., J. Appl. Phys. 114, 144304 (2013).
[2] C. Tessarek et al., Cryst. Growth Des. 14, 1486 (2014).