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15:00 |
HL 25.1 |
In-situ metal deposition for low contact resistance on n-type ZnSe — •Johanna Janßen, Torsten Rieger, Arne Hollmann, Lars Schreiber, and Alexander Pawlis
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15:00 |
HL 25.2 |
The contribution has been moved to HL 63.81.
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15:00 |
HL 25.3 |
Optical and magnetic studies of MBE-grown ferromagnetic CrSe and CrS layers in zincblende structure — •Johannes Röder, Richard T Moug, Kevin A Prior, Dana Vieweg, Hans-Albrecht Krug von Nidda, Alois Loidl, and Wolfram Heimbrodt
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15:00 |
HL 25.4 |
Characterization of epitaxial graphene nanoribbons (GNR) — •Jantje Schommartz, Talieh Ghiasi, Alexey Kaverzin, Johannes Aprojanz, Christoph Tegenkamp, and Bart J. van Wees
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15:00 |
HL 25.5 |
Ab initio metal-insulator transition in doped silicon — Edoardo G. Carnio, Nicholas D. M. Hine, and •Rudolf A. Römer
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15:00 |
HL 25.6 |
In-situ monitoring of opto-coupler degradation during high energy proton irradiation — •Heinz-Christoph Neitzert, Carmine Pellegrino, Giovanni Landi, Sophie Seidel, Jürgen Bundesmann, and Andrea Denker
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15:00 |
HL 25.7 |
CW and Pulsed mode Characterization of LED — •Laveen P. Selvaraj, Thomas Hünnerkopf, Matthias Wachs, and Ulrich T. Schwarz
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15:00 |
HL 25.8 |
Ohmic V-based contacts on n-Al0:8Ga0:2N for deep UV LEDs — •Luca Sulmoni, Martin Guttmann, Johannes Enslin, Christian Kuhn, Frank Mehnke, Tim Wernicke, and Michael Kneissl
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15:00 |
HL 25.9 |
Influence of p-AlGaN superlattice and quantum barrier composition on electro-optical characteristics of UVC-LEDs — •Pascal Röder, Christian Kuhn, Sylvia Hagedorn, Arne Knauer, Tim Wernicke, Markus Weyers, and Michael Kneissl
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15:00 |
HL 25.10 |
Simulation of the temporal behavior of LEDs during fast modulation — •Dominic Kunzmann and Ulrich T. Schwarz
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15:00 |
HL 25.11 |
The contribution has been withdrawn (duplicate of HL 25.7).
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15:00 |
HL 25.12 |
Investigation of crystal properties of epitaxially grown BAlN layers with boron content in the lower percentage range — •Jan-Patrick Scholz, Sebastian Bauer, Oliver Rettig, Yueliang Li, Haoyuan Qi, Johannes Biskupek, Ute Kaiser, Ferdinand Scholz, and Klaus Thonke
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15:00 |
HL 25.13 |
Photoluminescence Pumping Characteristics in Ga(N,As,P) /(B,Ga)(As,P) Heterostructures — •Florian Dobener, Robin C. Döring, Peter Ludewig, Wolfgang Stolz, and Sangam Chatterjee
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15:00 |
HL 25.14 |
Conoscopic Investigation of Birefringence in GaN Samples — •Lukas Uhlig, Ines Trenkmann, Matthias Wachs, and Ulrich T. Schwarz
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15:00 |
HL 25.15 |
Investigation of electrical conduction mechanisms in Si-doped GaN — •Stefan Kammer, Klaus Irmscher, Frank Mehnke, Tim Wernicke, Johannes Enslin, Norman Susilo, Martin Guttmann, Luca Sulmoni, Matthias Bickermann, and Michael Kneissl
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15:00 |
HL 25.16 |
Determination of threading dislocation density of AlN on sapphire substrates by X-ray diffraction — •Daniel Pacak, Johannes Enslin, Tim Wernicke, Sylvia Hagedorn, Arne Knauer, Carsten Hartmann, Heike Oppermann, Markus Weyers, and Michael Kneissl
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15:00 |
HL 25.17 |
Light extraction in UVC LEDs grown on ELO AlN/sapphire templates — •Sarina Graupeter, Martin Guttmann, Frank Mehnke, Christian Kuhn, Tim Wernicke, Mickael Lapeyrade, Arne Knauer, Sven Einfeldt, Markus Weyers, and Michael Kneissl
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15:00 |
HL 25.18 |
Investigation of AlGaN multiple quantum wells for deep ultraviolet emission using temperature and excitation power density dependent photoluminescence spectroscopy — Christoph Reich, •Baran Avinc, Johannes Enslin, Norman Susilo, Christian Kuhn, Tim Wernicke, and Michael Kneissl
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15:00 |
HL 25.19 |
Impact of a SiN surface layer on the core-shell growth of InGaN quantum wells around GaN microrods — •Christian Tessarek, Stefanie Rechberger, Christel Dieker, Martin Heilmann, Erdmann Spiecker, and Silke Christiansen
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15:00 |
HL 25.20 |
The effective potential energy drop as a control parameter for the sheet carrier density of two-dimensional electron gases in AlGaN/GaN heterostructures — •Dennis Mauch, Heiko Bremers, Uwe Rossow, and Andreas Hangleiter
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15:00 |
HL 25.21 |
Formation of I2-type basal-plane stacking faults in In0.25Ga0.75N multiple quantum wells grown on a (10-11) semipolar GaN template — •yueliang li, haoyuan qi, tobias meisch, matthias hocker, klaus thonke, ferdinand scholz, and ute kaiser
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15:00 |
HL 25.22 |
Epitaxial growth and characterization of thin AlBGaN layers with low boron content — •Natja Steiger, Jan-Patrick Scholz, Sebastian Bauer, Oliver Rettig, Tomáš Hubáček, Haoyuan Qi, Yueliang Li, Johannes Biskupek, Ute Kaiser, Ferdinand Scholz, and Klaus Thonke
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15:00 |
HL 25.23 |
Angular dependence of the Raman scattering intensity of optical phonons in wz-GaN — •Simon Brehm, Christian Röder, Cameliu Himcinschi, and Jens Kortus
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15:00 |
HL 25.24 |
Optical biosensing with InGaN/GaN quantum wells — •Benedikt Hörbrand, Sabyasachi Chakrabortty, Martin Schneidereit, Dominik Heinz, Sebastian Bauer, Florian Huber, Tanja Weil, Ferdinand Scholz, and Klaus Thonke
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