Dresden 2017 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 34: Two-dimensional materials III (joined session with TT)

HL 34.9: Vortrag

Dienstag, 21. März 2017, 12:15–12:30, POT 51

Electrical behavior of the oxidation of atomically thin HfSe₂ under ambient conditions — •Christopher Belke, Hennrik Schmidt, Benedikt Brechtken, Johannes C. Rode, Dmitri Smirnov, and Rolf J. Haug — Institut für Festkörperphysik, Leibniz Universität Hannover, 30167 Hannover

12 years after the discovery of graphene [1], two-dimensional materials are of rising importance in the research and development section. An example for those layered materials are TransitionMetalDichalcogenide (TMD) with the chemical formula MX₂ , where M is a transition metal and X a chalcogenide [2]. Some materials are very fragile in ambient conditions. One of them is the n-type semiconductor hafnium diselenide (HfSe₂) [3]. During the fabrication the samples were prepared under nitrogen atmosphere or were covered with PMMA. An increasing resistance was measured while the sample was oxidized under ambient conditions, as well as a change of the electric field effect was observed.

[1] A. K. Geim et al., Nature Materials, 6, 183 (2007)

[2] A. K. Geim, and I. V. Grigorieva, Nature 499, 419 (2013)

[3] M. Kang et al. APL 106, 143108 (2015)