Dresden 2017 – wissenschaftliches Programm
HL 36.11: Vortrag
Dienstag, 21. März 2017, 12:30–12:45, POT 251
High temperature stable single carrier hole only devices — •Shahidul Alam1,2, Peter Fischer3, Ulrich S. Schubert1,2, and Harald Hoppe1,2 — 1Center for Energy and Environmental Chemistry Jena (CEEC Jena) Friedrich-Schiller-Universität Jena Philosophenweg 7a 07743 Jena, Germany — 2Institute of Organic and Macromolecular Chemistry Friedrich-Schiller-Universität Jena Humboldtstr. 10 07743 Jena, Germany — 3Institut für Werkstofftechnik, TU Ilmenau, Gustav-Kirchhoff-Str. 6, 98693 Ilmenau, Germany
Thin hole transport layers (HTL) are crucial elements in organic semiconductor based devices. Metal oxides are an encouraging material class for this purpose. Metal oxides can be used to modify either of the two contacts in a device for improved wettability as well as chemical and electronic compatibility of the contacts with the organic layer. Several materials like NiO, V2O5, WO3 and MoO3 have demonstrated encouraging prospective for performing as efficient charge transport layers. Among them molybdenum oxide (MoO3) attracted extensive interest due to its superior performance. In order to evaluate charge transport properties of annealed semiconductor films, devices are required to be stable at high annealing temperature. Whereas PEDOT:PSS has generally proper charge injection and extraction properties, these may drastically change upon heating above certain temperature. In this work, we show that a MoO3 interlayer can efficiently substitute PEDOT:PSS as hole transport layer within single carrier hole only devices (SCHD), because of its better stability at high annealing temperature.