Dresden 2017 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 38: Zinc Oxide
HL 38.2: Vortrag
Dienstag, 21. März 2017, 09:45–10:00, POT 06
Unambiguous identification of Sn3O4 using Raman spectroscopy and ab initio calculations — •Christian T. Reindl1, Martin Becker1, Bianca K. Eifert2, Marcel Giar2, Lilan Zheng3, Angelika Polity1, Yunbin He3, Christian Heiliger2, and Peter J. Klar1 — 1I. Physikalisches Institut, Justus-Liebig-Universität Gießen, Heinrich-Buff-Ring 16, 35392 Gießen — 2Institut für Theoretische Physik, Justus-Liebig-Universität Gießen, Heinrich-Buff-Ring 16, 35392 Gießen — 3Faculty of Materials Science and Engineering, Hubei University, Wuhan 430062, China
A lot is known about the two stable tin oxides SnO and SnO2. Both physes have been intensively investigated and are widely used in applications such as transparent conducting oxides, gas sensors, and lithium ion batteries. Over the last century many attempts have failed to identify the metastable oxide occuring at an intermediate Sn:O stochiometry. Using Raman spectroscopy as the experimental backbone and ab initio density functional theory (DFT) calculations we are able to distinguish different candidates and finaly identify the intermediate phase as Sn3O4. The samples evaluated are of different origin. One kind was grown utilizing ion beam sputter deposition (IBDS) directly, whereas the second kind was first ion beam sputtered as SnO and annealed to form the intermediate phase. The third kind was a SnO layer produced by pulsed laser deposition which was oxidized to the intermediate phase afterwards. All three variants show none or only slight traces of SnO or SnO2, respectively and are in excellent agreement with the calculated Sn3O4 spectra.