Dresden 2017 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
HL: Fachverband Halbleiterphysik
HL 41: Nitrides: Preparation
HL 41.4: Vortrag
Dienstag, 21. März 2017, 12:30–12:45, POT 06
high quality Al films grown by molecular beam epitaxy — •Bowen Sheng1, Yixin Wang1, Zhaoying Chen1, Ping Wang1, Frank Bertram2, Jürgen Christen2, and Xinqiang Wang1 — 1SKLAMMP, School of Physics, Peking University, Beijing, China — 2IEP, Otto-von-Guericke-University Magdeburg, Magdeburg, Germany
With the development of plasmonic devices in the past decade, various plasmonic applications such as plasmonic nanolasers[1], plasmon enhanced single photon emission etc.,[2] attracted much attention. However, nanoscale plasmonic devices are extremely sensitive to the metal and interface quality. Among those three metals used frequently to generate plasmons--gold, silver, aluminum (Al), Al is the most promising metal for ultraviolet plamonics devices, due to the interband transition or absorption of gold and silver in UV regime.[3]
In this work, we demonstrate the successful growth of atomic flat single crystalline Al thin films on Si(111) substrates by molecular beam epitaxy (MBE). The growth temperature and Al flux have been modified to optimize the crystalline quality and surface morphology of Al film, and finally we get high-quality Al film with mirror-like surface. The surface morphology was measured by AFM, revealing a root-mean-square roughness of 0.395nm. The FWHM of the XRD rocking curve is 564 arcsec, which indicates the realization of high-quality Al films. Other detailed analysis will be reported as well.
[1] Lu et al.Science 2012, 337(6093), 450-453; [2] Gong et al. Proc. Nat. Ac. Sci. 2015, 112(17), 5280-5285; [3]Chou et al. Sci Rep 2016, 6.