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Dresden 2017 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 50: Nitrides: Preparation and Characterization

HL 50.1: Hauptvortrag

Mittwoch, 22. März 2017, 09:30–10:00, POT 251

Photoactivated chemical processes on group III-nitride nanostructures and nanohybridsPaula Neuderth1, Sara Hölzl1,6, Pascal Hille1,6, Jörg Schörmann1, Christian Reitz2, Mariona Coll3, Jordi Arbiol3,4, Roland Marschall5, and •Martin Eickhoff1,61I. Physikalisches Institut, JLU Gießen, 35392 Gießen, Germany — 2Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), Germany — 3ICMAB-CSIC, Bellaterra, CAT, Spain — 4ICN2, Bellaterra, CAT, Spain — 5Physikalisch-Chemisches Institut, JLU Gießen, 35392 Gießen, Germany — 6Institut für Festkörperphysik, Universität Bremen,, 28359 Bremen, Germany

The photoluminescence (PL) emission properties of group III-nitride nanowires and nanowire heterostructures sensitively respond to changes in the chemical environment in gaseous and liquid atmospheres. At the same time, the presence of photogenerated charge carriers on their surfacecan trigger chemical processes by charge transfer into electronic levels/molecular orbitals of adsorbed gas molecules or surrounding electrolytes, as employed in photo-electrochemical water splitting. Hence, monitoring of the PL and controlling the photocurrent allows for analyzing and initiating photoactivated chemical surface processes as well as establishing new principles for opto-chemical nanosensors. We demonstrate these strategies by discussing different examples such as optical pH-sensing, detection of water adsorption or Performance enhancement of oxide-coated InGaN/GaN nanowire photoanodes. We show that part of these concepts can also be transferred to two dimensional semiconductor materials.

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