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HL: Fachverband Halbleiterphysik
HL 58: Quantum Dots: Optical Properties IV
HL 58.5: Vortrag
Mittwoch, 22. März 2017, 16:00–16:15, POT 151
Influence of morphology on InAlGaAs quantum dots emitting at telecom wavelength — •Christian Carmesin1, Marco Schowalter2, Vitalii Sichkovskyi3, Mohamed Benyoucef3, Daniel Mourad1, Michael Lorke1, Tim Grieb2, Knut Müller-Caspary2, Johann Peter Reithmaier3, Andreas Rosenauer2, and Frank Jahnke1 — 1Institute for Theoretical Physics, University of Bremen — 2Institute of Solid State Physics, University of Bremen — 3Institute of Nanostructure Technologies and Analytics, University of Kassel
Self-organized quantum dots are promising candidates for the realization of deterministic single photon sources with high repetition rate and tunable emission energy due to the advantage of integrability into electrical devices. We have characterized a new and promising material system of InAs/InAlGaAs/InP based quantum dots and identified dominant contributions to the connection between morphology and optical properties. For this purpose, experimentally determined photoluminescence spectra are compared to results of atomistic tight-binding calculations using a one hundred million atom supercell. Structure und composition characteristics of the system are obtained from high-resolution scanning transmission electron microscopy of a single representative quantum dot. We have identified concentration fluctuations among different quantum dots of the ensemble as the main source of inhomogeneous broadening.