Dresden 2017 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
HL: Fachverband Halbleiterphysik
HL 59: Nitrides: Preparation and Characterization II
HL 59.5: Vortrag
Mittwoch, 22. März 2017, 16:15–16:30, POT 251
Time-integrated and time-resolved luminescence studies of planar and 3D InGaN/GaN heterostructures — •Angelina Vogt1, Jana Hartmann1,2, Hao Zhou1, Sönke Fündling1,2, Hergo-Heinrich Wehmann1,2, Andreas Waag1,2, and Tobias Voss1 — 1Institute of Semiconductor Technology and Laboratory for Emerging Nanometrology, TU Braunschweig, 38092 Braunschweig — 2Epitaxy Competence Center, ec2, 38092 Braunschweig
Three-dimensional core-shell GaN-based heterostructures with embedded InGaN quantum wells (QWs) on non-polar sidewalls are promising candidates for a novel LED architecture based on GaN material free of extended defects. In order to optimize the internal quantum efficiency (IQE) of the 3D heterostructures, a detailed knowledge of the radiative and non-radiative recombination channels and their rates is required. Here, we compare the spectrally and temporally resolved photoluminescence (PL) of InGaN/GaN 3D heterostructures with the respective data of planar InGaN/GaN structures. All heterostructures were grown by MOVPE. We used time-integrated PL measurements to analyse the homogeneity of the indium in the QWs. The luminescence dynamics of the InGaN QWs were investigated by time-resolved experiments in order to characterise the fundamental optical relaxation and recombination processes. We analyse the processes for different structures, laser photon energies and temperatures. Due to the quantum confined Stark effect (QCSE), we find a biexponential decay characteristic for the planar structures, while the 3D structures with the non-polar InGaN QWs as light-emitters show a monoexponential decay of the InGaN PL.