Dresden 2017 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 59: Nitrides: Preparation and Characterization II
HL 59.9: Vortrag
Mittwoch, 22. März 2017, 17:15–17:30, POT 251
Misfit strain as a control parameter in epitaxy of In-rich non- and semipolar GaInN/GaN multi quantum well structures — •Philipp Horenburg1, Fedor Alexej Ketzer1, Heiko Bremers1, Uwe Rossow1, Florian Tendille2, Philippe De Mierry2, Philippe Vennéguès2, Jesús Zúñiga-Pérez2, and Andreas Hangleiter1 — 1Institute of Applied Physics, TU Braunschweig, Germany — 2Centre de Recherche sur l’Hétéro-Epitaxie, Valbonne, France
We demonstrate the role of misfit strain as an independent parameter in MOVPE growth of m-plane and (1122)-oriented, In-rich GaInN quantum wells (QWs). Reducing the misfit strain in the active zone is an essential task to improve the material quality and efficiency of light emitting structures. In order to manipulate the strain state of the QWs, we insert a metamorphic AlInN buffer layer as a growth template for the active zone. With the buffer layer being partially relaxed towards larger in-plane lattice constants, the lattice mismatch at a given In composition of the GaInN is reduced as compared to GaN as a template. As a consequence, we see a decrease of the strain energy in the QWs as compared to samples without AlInN under identical QW growth conditions. We further see evidence for an increased In incorporation efficiency up to InN mole fractions of 38% in both structural analysis by high resolution X-ray diffraction and room temperature photoluminescence spectroscopy. Thus, strain manipulation opens up an additional degree of freedom in epitaxy of GaInN QWs in addition to thermodynamic parameters such as the QW growth temperature.