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HL: Fachverband Halbleiterphysik

HL 63: Poster: Quantum Dots and Optics

HL 63.78: Poster

Mittwoch, 22. März 2017, 15:00–19:00, P1A

InAs quantum dots without wetting layer photoluminescence — Sven Scholz, •Yannick Raffel, Sascha René Valentin, Carlo Alberto Sgroi Penagos, Andreas D. Wieck, and Arne Ludwig — Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum, Universitätsstrasse 150, D-44780 Bochum, Germany

InAs quantum dots (QDs) are promising hosts for various applications and can be used as a model system for zero dimensional quantum physics. During strain driven growth of QDs by the Stranski-Krastanow (SK) mechanism, also a monolayer of InAs is formed. This so called wetting layer (WL) acts as a two dimensional quantum well. While SK-QDs usually come along with such a WL, it is an interesting question whether we can purify our QD photoluminescence (PL) from the influence of this. We found a reliable growth mechanism described and analyzed in this contribution. With this mechanism we are indeed able to grow QD samples with all dominant PL peaks stemming from the QDs and not from the wetting layer. Capacitance voltage measurements to monitor the QD loading with single electrons allow deeper insights in the conduction band energy structure.