Dresden 2017 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 64: Poster: Photovoltaics and Optics

HL 64.35: Poster

Mittwoch, 22. März 2017, 15:00–19:00, P1C

Cross-section electron beam induced voltage investigations of different p-n junctions — •Tobias Westphal, Patrick Peretzki, and Michael Seibt — Georg-August-Universität Göttingen, IV. Physikalisches Institut, Göttingen

P-n heterojunctions consisting of the p-doped manganite Pr_1−xCa_xMnO₃ (PCMO) and the n-doped titanite SrTi_1−yNb_yO₃ (STNO), both perovskite-structured, have been investigated with Electron Beam Induced Current (EBIC) [1,2]. To further study the photovoltaic properties of this system, the Electron Beam Induced Voltage (EBIV) technique is used in this work. The standard form for EBIV models [3] predicts a behaviour logarithmic to the EBIC, which is useful for measuring the nanometer scale diffusion length of minority charge carriers in this system.

In this work a well-known silicon sample is used at first to understand the results of the EBIV technique. For this reason, both plan view and cross-section measurements are done by combining SEM-based EBIV with Focused Ion Beam preparation in dual beam instruments and comparing them to finite element based simulations. In a next step, the method is brought to PCMO/STNO interfaces.

[1] B. Ifland, P. Peretzki, B. Kressdorf, P. Saring, A. Kelling, M. Seibt and C. Jooss, Beilstein J. Nanotechnol. 2015, 6, 1467-1484

[2] P. Peretzki, B. Ifland, C. Jooss and M. Seibt, Phys. Status Solidi RRL. 2016

[3] H.-C. W. Huang, C. F. Aliotta, and P. S. Ho, Appl. Phys. Lett. 41, 54 (1982)