HL 72: Nitrides: Devices
Donnerstag, 23. März 2017, 09:30–11:45, POT 06
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09:30 |
HL 72.1 |
Fabrication and characterization of hybrid n-GaN/p-PEDOT structures for optoelectronic applications — •Linus Krieg, Priya Moni, Karen Gleason, and Tobias Voss
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09:45 |
HL 72.2 |
Optoelectronic Characterization of AlGaN-based MSM-UV-Photodetectors — •Sebastian Walde, Moritz Brendel, Sylvia Hagedorn, Frank Brunner, Ute Zeimer, and Markus Weyers
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10:00 |
HL 72.3 |
Beyond classical band offsets: Employing multiquantum barriers for electron blocking in group III-nitride devices — •Anton Muhin, Martin Guttmann, Christoph Reich, Konrad Bellmann, Johannes Enslin, Norman Susilo, Luca Sulmoni, Tim Wernicke und Michael Kneissl
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10:15 |
HL 72.4 |
Enhanced light extraction and internal quantum efficiency for UVB LEDs with UV-transparent p-AlGaN superlattices — •Martin Guttmann, Martin Hermann, Johannes Enslin, Sarina Graupeter, Luca Sulmoni, Christian Kuhn, Tim Wernicke, and Michael Kneissl
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10:30 |
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Coffee Break
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11:00 |
HL 72.5 |
Influence of the GaN:Mg contact layer on the electro-optical properties of UVB LEDs — •Norman Susilo, Johannes Enslin, Luca Sulmoni, Martin Guttmann, Ute Zeimer, Tim Wernicke, Markus Weyers, and Michael Kneissl
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11:15 |
HL 72.6 |
Time-resolved spectral characterization of white LEDs for car-to-x communication — •Vanessa Simon, Matthias Wachs, and Ulrich T. Schwarz
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11:30 |
HL 72.7 |
Molecular control over Ni/GaN Schottky barrier diode using Thiol Porphyrin — •Manjari Garg, Tejas R. Naik, Subramaniyam Nagarajan, V. Ramgopal Rao, and Rajendra Singh
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