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Dresden 2017 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 74: Group IV: Si/Ge/SiC

Donnerstag, 23. März 2017, 12:00–13:15, POT 06

12:00 HL 74.1 The silicon path to a new kilogram: Impact of the isotopic composition of Si determined by high resolution mass spectrometry — •Axel Pramann and Olaf Rienitz
12:15 HL 74.2 Modulation Doping of Si using Al-induced Acceptor States in SiO2Dirk König, •Daniel Hiller, Sebastian Gutsch, Margit Zacharias, and Sean Smith
12:30 HL 74.3 Investigation of 3C-SiC/SiO2 interfacial point defects from ab initio g-tensor calculations and electron paramagnetic resonance measurements — •T. A. Nugraha, M. Rohrmüller, U. Gerstmann, S. Greulich-Weber, A. Stellhorn, J. L. Cantin, J. Von Bardeleben, W. G. Schmidt, and S. Wippermann
12:45 HL 74.4 Direct band gap and strain-related properties of germanium under high uniaxial stress — •Kevin Guilloy, Alban Gassenq, Nicolas Pauc, S. Tardif, F. Rieutord, Y.M. Niquet, J.M. Escalante, I. Duchemin, L. Milord, G. Osvaldo Dias, D. Rouchon, J. Widiez, J.M. Hartmann, J. Aubin, A. Chelnokov, R. Geiger, T. Zabel, E. Marin, H. Sigg, J. Faist, V. Reboud, and Vincent Calvo
13:00 HL 74.5 Defect-induced magnetism in SiC probed by nuclear magnetic resonance — •Zhitao Zhang, Daryna Dmytriieva, Sebastian Molatta, J. Wosnitza, Yutian Wang, Manfred Helm, Shengqiang Zhou, and Hannes Kühne
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