Dresden 2017 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 79: Poster: New Materials

HL 79.17: Poster

Donnerstag, 23. März 2017, 15:00–19:00, P2-OG3

Elastic strain relaxation and evolution in GaAs/InGaAs/GaAs radial nanowire heterostructures — •Ali Al Hassan¹, Ryan B. Lewis², Hanno Küpers², Emmanouil Dimakis², Arman Davtyan¹, Christian Sternemann³, Abbes Tahraoui², Lutz Geelhaar², and Ullrich Pietsch¹ — ¹Naturwissenschaftlich-Technische Fakultät der Universität Siegen, 57068 Siegen, Germany — ²Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany — ³Zentrum fuer Synchrotronstrahlung Technische Universitaet Dortmund, Maria-Goeppert-Mayer-Str. 2, 44227 Dortmund, Germany

The optical performance of nanowire based devices is strongly related to the sharpness of the hetero-interface and the homogeneity of atomic composition within the active volume. In GaAs/InGaAs/GaAs core-shell-shell nanowires, misfit strain can easily release towards NW side planes. However due to hexagonal geometry of the nanowires, the interfacial strain might differ towards different radial directions and requires careful analysis. Towards this goal, we report explicitly on the 3D investigation of the strain interaction and relaxation mechanisms in GaAs/InGaAs/GaAs core-shell-shell NW ensembles by means of high resolution x-ray diffraction (XRD) and finite element methods (FEM) as a function of InGaAs shell thickness and nominal indium concentration. In order to obtain a full 3D strain field map, special attention was paid to determine the strain impact along the azimuth and in-plane directions of the NW core shell system.