Dresden 2017 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 79: Poster: New Materials
HL 79.20: Poster
Donnerstag, 23. März 2017, 15:00–19:00, P2-OG3
Comparison of Cu, Ag and Pt assisted chemical etching for metallurgical silicon purification — •Junna Wang1,2, Stefan L. Schweizer1, Alexander Sprafke1, and Ralf B. Wehrspohn1,2 — 1Institute of Physics, Martin-Luther-University Halle-Wittenberg, Germany — 2Fraunhofer-Institut für Mikrostruktur von Werkstoffen und Systemen IMWS
The purity of metallurgical grade silicon can be improved during metal assisted chemical etching (MaCE). Since MaCE can form nanostructures in metallurgical silicon (MG Si), metal impurities are removed during the formation of porous silicon. We chose different catalytic metals and compared the resulting nanostructures moreover the catalyst selection results in different purification efficiency and application.