Dresden 2017 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
HL: Fachverband Halbleiterphysik
HL 79: Poster: New Materials
HL 79.23: Poster
Donnerstag, 23. März 2017, 15:00–19:00, P2-OG3
Micro-Raman spectroscopy of laser-annealed reheated SiOx films on silica substrate — •Christian Gobert1, Nan Wang1, Thomas Fricke-Begemann2, Jürgen Ihlemann2, and Michael Seibt1 — 1IV. Physikalisches Institut, Universität Göttingen, Germany — 2Laser-Laboratorium Göttingen, Germany
The development of Si-based opto-electronics for integrated circuits is still an unsolved problem as bulk-Si is an indirect semiconductor resulting in improbable optical transitions. Nanocrystalline silicon (nc-Si) is expected to be a feasible material for this purpose due to quantum confinement effects compassing the indirect band gap [1]. It was recently shown [2] that cw laser irradiation of substrate-bound silicon-rich silicon oxide (SRSO) is suitable to produce a phase separation reaction leading to strong room temperature photoluminescence (PL). The latter was attributed to small amorphous Si clusters in the remaining amorphous silicon oxide matrix, as indicated by Raman spectroscopy. Such particles, however, could not be confirmed by transmission electron microscopy.
In this work, the effect of subsequent low-temperature furnace annealing of laser-annealed SiOx films on silica substrate is investigated by micro-Raman spectroscopy. In order to test the above hypothesis, changes in Raman spectra induced by low temperature (500-700∘C) furnace annealing are followed to observe the selective crystallization of a-Si clusters. [1] T. Nikitin, L. Khriachtchev, Nanomaterials 5, 614-655 (2015) [2] T. Fricke-Begemann, N. Wang, P. Peretzki, M. Seibt, J. Ihlemann, J. Appl. Phys. 118, 124308 (2015)