Dresden 2017 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 79: Poster: New Materials
HL 79.30: Poster
Donnerstag, 23. März 2017, 15:00–19:00, P2-OG3
Electrical Measurements of Single As-Grown Semiconductor Core-Shell Nanowires — •Danial Bahrami1, Jovana Colvin2, Hanno Küpers3, Rainer Timm2, Lutz Geelhaar3, and Ullrich Pietsch1 — 1University of Siegen, Solid State Physics department , Siegen, Germany — 2Lund University, NanoLund and division of Synchrotron Radiation Research, Lund, Sweden — 3Paul-Drude-Institut für Festkörperelektronik, Berlin, Germany
Characterizing and controlling the electrical properties of core-shell nanowire (NW) heterostructures is fundamental for their implementation into device applications including photonics, sensors, and electronics. For typical conductivity studies, the NW, after removal from the original substrate, is deposited horizontally and contacted with electrodes in as-called field-effect transistor geometry. Here, we report on electrical measurements at single NWs in their as-grown geometry on the substrate by means of FIB/SEM and AFM systems. Using either a tungsten nano-manipulator probe installed inside the FIB/SEM chamber or a sharp metallic tip of a conductive AFM, the I-V curves and current maps along the side-wall and on the top of selected GaAs/InGaAs core-shell NWs have been measured. Similar to previous studies [1, 2], significant differences between the I-V characteristics from individual NWs grown on the same substrate are observed, confirming the necessity of thorough characterization at the single-NW level. The electrical characteristics of NWs can be correlated to their structural properties.
[1] R.Timm et al. Nano Lett. 2013, 13, 5182 -5189. [2] G.Bussone et al. Nano Lett. 2015, 15, 981-989.