Dresden 2017 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 82: Quantum Information Systems
HL 82.4: Vortrag
Freitag, 24. März 2017, 10:30–10:45, POT 81
Defect Engineering in Silicon Carbide — •Christian Kasper1, Hannes Kraus1,2, Dimitrij Simin1, Yoshinori Suda3, Takeshi Ohshima2, Wataru Kada3, Shunsuke Kawabata3, Tomoya Honda2,4, Yasuto Hijikata4, Georgy Astakhov1, and Vladimir Dyakonov1,5 — 1Exp. Physics VI, Julius Maximilian University of Würzburg — 2National Institutes for Radiological Science and Technology(QST, formerly Japan Atomic Energy Agency), Takasaki, Japan — 3Gunma University, Kiryu, Japan — 4Saitama University, Saitama, Japan — 5ZAE Bayern, Würzburg
Because of their long spin lifetime[1] and their unique spin-preserving optical pumping mechanism[2], quantum centers in silicon carbide (SiC) are promising candidates for spin based quantum information processing. Well known methods to produce one of these quantum center species, the silicon vacancy, homogeneously in the bulk are electron or neutron[3] irradiation. In contrast, a method to implant silicon vacancies at a specific position would be a huge improvement in terms of defect engineering.
In this study, the generation of silicon vacancies in bulk SiC as a result of proton irradiation can be verified. By the use of confocal microscopy, we show that the implantation depth is tunable by varying the irradiation energy. Further, we verify that by proton beam writing silicon vacancies can be implanted at a specific position in a SiC crystal.
[1] Simin et al., arXiv:1602.05775v2 (2016)
[2] H. Kraus et al., Nature Phys. 10, 157 (2014)
[3] F. Fuchs et al., Nature Commun. 6, 7578 (2015)