Dresden 2017 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 86: New Materials

HL 86.5: Vortrag

Freitag, 24. März 2017, 10:30–10:45, POT 112

Investigation of dual-tone resists for low-temperature electron-beam lithography of deterministic quantum structures — •Sven Rodt, Arsenty Kaganskiy, Peter Schnauber, Tobias Heuser, Ronny Schmidt, and Stephan Reitzenstein — Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, D-10623 Berlin

The deterministic integration of light-emitting semiconductor nanostructures like e.g. single quantum dots is of large interest for novel quantum technologies that rely on the emission of single photons. For this we apply an approach that is based on cathodoluminescence spectroscopy in combination with in-situ electron-beam lithography (EBL) [1]. Due to the nature of light emission from quantum dots and its enhancement at low temperatures (LT), such processing is best carried out at liquid-helium temperature. Consequently, EBL resists are needed that perform well in this extreme temperature regime. Here we report on the resists PMMA and CSAR 62 and their applicability in the full range between room temperature and 4 K. They exhibit a dual-tone behavior as they operate in the positive-tone regime for small electron doses and enter the negative-tone regime for larger doses. Besides two-dimensional structuring also three-dimensional EBL is performed and evaluated. CSAR 62 is found to be superior to PMMA as the LT-EBL is more straightforward and results in a higher yield and quality of the processed structures [2].

[1] M. Gschrey et al., Appl. Phys. Lett. 102, 251113 (2013).

[2] A. Kaganskiy et al., J. Vac. Sci. Technol. B 34, 061603 (2016).