Dresden 2017 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 9: Quantum Dots: Preparation and Characterization
HL 9.7: Vortrag
Montag, 20. März 2017, 11:30–11:45, POT 112
Single shot spin readout in a 3D crystalline transistor — •Matthias Koch1,2, Eldad Peretz2,3, Joris G. Keizer2, and Michelle Y. Simmons2 — 1Fritz-Haber-Institut der Max-Planck-Gesellschaft — 2University of New South Wales — 3Bar Ilan University
Atomic-scale fabrication has recently been demonstrated in silicon using scanning tunneling microscope (STM) hydrogen resit lithography[1]. Dopants can be placed in silicon with atomic precision to fabricate a single atom transistor[2], where a single atom controls the device opacity. Scalable architectures, i.e. based on cross wires, demand from hydrogen resist lithography to separate the individual elements of the electronic circuit on different planes. Here, we demonstrate a new fabrication recipe by performing single shot spin readout with a vertically aligned top gate. The additional device layer does not cause instabilities which reflects in a high readout fidelity of 97%. Our results show that hydrogen resist lithography can be extended easily to multiple planes, a premises for the development of complex device architectures.
[1] A. Fuhrer, M. Füchsle, T. C. G. Reusch, B. Weber, and M. Y. Simmons, Nano Letters 9, 707 (2009)
[2] F. Martin, M. Jill A., M. Suddhasatta, R. Hoon, L. Sunhee, W. Oliver, H. Lloyd C. L., K. Gerhard, and S. Michelle Y., Nat Nano 7, 242 (2012)