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Dresden 2017 – wissenschaftliches Programm

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KR: Fachgruppe Kristallographie

KR 1: Various Topics I (with DF)

KR 1.6: Vortrag

Montag, 20. März 2017, 11:30–11:50, GER 37

Interface engineering in all-oxide BaxSr1−xTiO3 thin-film varactors with highly conducting SrMoO3 electrodes — •Patrick Salg1, Aldin Radetinac1, Dominik Walk2, Holger Maune2, Rolf Jacoby2, Philipp Komissinskiy1, and Lambert Alff11Institute of Materials Science, TU Darmstadt, Germany — 2Institute for Microwave Engineering and Photonics, TU Darmstadt, Germany

We present epitaxial varactor heterostructures utilizing highly conducting oxide SrMoO3 bottom electrodes with a room-temperature resistivity of 30 µΩcm [1] grown by pulsed laser deposition using SrMoO4 targets. During thin film synthesis, highly reductive conditions are essential to achieve a Mo4+ state in the SrMoO3 thin film. In contrast to the growth conditions of SrMoO3, the growth of BaxSr1−xTiO3 films requires a high oxygen partial pressure of 1.5 mTorr. In order to prevent oxidation of the underlying SrMoO3 layers during growth of BaxSr1−xTiO3, a SrTiO3 layer was grown between SrMoO3 and BaxSr1−xTiO3. The effectivity of this SrTiO3 interlayer as an oxygen diffusion barrier was investigated by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The use of a SrTiO3 interlayer allows a successful epitaxial growth of varactor heterostructures with high electric tunability of up to 80 % and low losses at microwave frequencies.

[1] A. Radetinac et al., Highly conducting SrMoO3 thin films for microwave applications, Appl. Phys. Lett. 105, 114108 (2014).

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