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Dresden 2017 – scientific programme

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MA: Fachverband Magnetismus

MA 49: Surface Magnetism 2 (Joint Session with O)

MA 49.11: Talk

Thursday, March 23, 2017, 12:15–12:30, HSZ 401

Current-induced switching and magnetic relaxation in antiferromagnetic memory devices — •Sonka Reimers1,2, Carl Andrews1, Peter Wadley1, Richard P Campion1, Kevin W Edmonds1, Andrew W Rushforth1, Bryan L Gallagher1, and Vasily Moshnyaga21School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom — 2I. Physical Institute, Georg-August-Universität, 37077 Göttingen, Germany

To date antiferromagnets (AFs) play only a passive role in spintronic applications. Manipulating and measuring the magnetic state is more difficult than in ferromagnets (FM). On the other hand, purely AF-based devices offer several advantages compared to their FM counterparts including robustness against electric and magnetic perturbations, and ultrafast spin dynamics. It has recently been demonstrated that the local magnetic moment can be switched between stable configurations in biaxial AF CuMnAs thin film devices using electrical current pulses [1].

Future memory applications require a thorough understanding of the magnetic relaxation processes following a current pulse. Experimentally we analyse the dynamics by measuring the time-dependence of the anisotropic magnetoresistance (AMR). We examine the data regarding their information on the magnetic anisotropy of the sample, which may be modified by an externally applied strain, offering an important parameter for controlling the stability of the AF state.

References: [1] P. Wadley et al. "Electrical switching of an antiferromagnet". In: Science 351, 587 (2016)

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