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Dresden 2017 – scientific programme

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MI: Fachverband Mikrosonden

MI 5: Session on Nanostructuring Beyond Conventional Lithography

MI 5.4: Talk

Wednesday, March 22, 2017, 12:30–12:45, MER 02

Nanopillar with self-assembled Si nanodot for single electron transistor — •Thomas Prüfer, Karl-Heinz Heinig, Wolfhard Möller, and Johannes von Borany — Helmholtz-Zentrum Dresden-Rossendorf, Dresden-Rossendorf, Deutschland

Conventional Lithography allows the fabrication of structures down to  10 nm, being still too large for single electron transistors (SET) operating at room temperature (RT), which requires a tiny quantum dot (<5nm) embedded in SiO2, with tunnel distances to the source and drain <2nm. Here, we predict a fully CMOS-compatible method of self-assembly of a single Si quantum dot. We assume that 10*20nm thin nanopillars of a layer stack c-Si/6nm SiO2/30nm a-Si are made by conventional lithography. We predict that such a single dot is self-organized and self-assembled between the top and bottom silicon layer by phase separation of metastable SiOx. The SiOx is made by collisional mixing in the layer stack, which is simulated by TRI3DYN [1]. The phase separation of SiOx is described by 3D kinetic lattice Monte Carlo simulations [2]. Our results predict that a single Si nanodot forms if the volume of SiOx is smaller than (10nm)3. This work has been funded by the European Union’s Horizon 2020 research and innovation program under grant agreement No 688072. [1] W. Möller; NIM B, 322, 23*33; [2] M. Strobel, K.H. Heinig, W. Möller, PRB 64, 245422

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