Dresden 2017 – wissenschaftliches Programm

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MM: Fachverband Metall- und Materialphysik

MM 22: Poster session I

MM 22.37: Poster

Montag, 20. März 2017, 19:00–20:00, P4

In situ functionalization and spectroelectrochemical characterization of gallium nitride surfaces for novel hybrid sensing platforms — •Princia Salvatore, Eugen Speiser, and Norbert Esser — Leibniz-Institut für Analytische Wissenschaften - ISAS - e.V., Schwarzschildstr. 8, 12489 Berlin

Inspired by the existing semiconductor technology and encouraged by the unique set of optical and electronic properties of gallium nitride (GaN), the integration of such a material in novel sensing platforms has been attempted proceeding through a solution-based in situ modification of GaN surfaces via a phosphonic acid (PA) linkage. In contrast to other harsher functionalization routes, this approach offers the opportunity to prepare samples in solution with no need of removing oxide layers, and to exploit the side/end groups of PA derivatives for GaN surfaces terminating with different chemistries. PA adsorbates based on terpyridine are under investigation with the aim of exploring robust surface-confined layers for metal ions chelation and sensing in solution. A dual investigation by interfacial electrochemistry and optical spectroscopy (Raman and photoluminescence analysis), referred to as spectroelectrochemistry, serves to verify efficiency of the surface modification scheme and sensitivity of the sensing route, which applies to functionalized GaN crystals as planar or nanostructured surfaces. Under a monochromatic light excitation and bias, insight into interfacial processes (surface assembly, charge transfer, band bending, etc.) is gained towards the creation of novel hybrid sensors, based here on the highly controlled deposition of PA derivatives on GaN electrodes.