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MM: Fachverband Metall- und Materialphysik

MM 40: Transport III - thermal transport

MM 40.4: Vortrag

Mittwoch, 22. März 2017, 11:00–11:15, IFW D

Topological nodal line Dirac semimetal HfSiS — •Chandra Shekhar, Nitesh Kumar, Kaustuv Manna, Yanpeng Qi, Shu-Chun Wu, Binghai Yan, and Claudia Felser — Max Planck Institute for Chemical Physics of Solids, 01187 Dresden, Germany

Topological semimetals provide a wide platform to realize Dirac, nodal Dirac and Weyl fermions. Recently, HfSiS has been predicted as a nodal line Dirac semimetal. This compound shows hole carrier density which is higher as compare to the other known semimetals at 2K and massive amplitude of de Haas-van Alphen and Shubnikov-de Haas oscillations up to 30 K in 7 T. Low effective mass of the charge carriers acquire extra -Berry phase, a witness of topological Dirac type dispersion of bands which are originated from Si square net and Zr atoms. Furthermore, we establish the 3D Fermi-surface that consists of water caltrop-like electron and barley seed-like hole pockets. Asymmetrical nature of pockets is accountable to anisotropic magnetoresistance in HfSiS.