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MM: Fachverband Metall- und Materialphysik
MM 63: Nanomaterials II
MM 63.4: Vortrag
Donnerstag, 23. März 2017, 12:45–13:00, IFW D
Towards Graphene synthesis: a comparative study of Nickel/SiO2/Si annealing in vacuum and hydrogen — •Fatima Akhtar1, Grzegorz Lupina1, Peter Zaumseil1, Sebastian Schulze1, Andre Wolff1, Thomas Schroeder1,2, and Mindagaus Lukosius1 — 1IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany — 2BTU Cottbus-Senftenberg, Konrad-Zuse Straße 1, 03046 Cottbus, Germany
In microelectronics, large area growth of high quality graphene is of highest importance. Metallic catalysts like Nickel (Ni) favors the synthesis of graphene by Chemical Vapor deposition (CVD). In the present study, we show the optimization of 200 nm Ni/SiO2/Si substrates for the growth of graphene. A series of annealing was performed in the temperature range (925-1050 *C) in either vacuum or hydrogen ambient. If Ni was annealed in vacuum conditions, it was thermally stable up to 1050 *C and smoother (rms = 10.3 nm) as compared to the rms value (48.5 nm) of the samples, annealed in hydrogen atmosphere. X-ray diffraction (XRD) spectra revealed the poly-crystalline structure of Ni, where mainly Ni (111) and Ni (200) reflections have been observed. The poly-crystallinity of Ni with the main Ni (111) orientation was also confirmed by the electron back scattering diffraction (EBSD) technique. In the final step, graphene was then deposited on the annealed Ni samples, using ethylene (C2H4) as a precursor gas (deposition time: 5 min at 1x10-2 mbar pressure and deposition temperature of 925 *C). Typical G and 2D peaks were identified in the Raman spectra, indicating good quality of graphene and large grains.