Dresden 2017 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 24: Semiconductor Substrates: Adsorption

O 24.4: Vortrag

Montag, 20. März 2017, 18:15–18:30, WIL C307

Nanopatterning of Group-V-Elements for Tailoring the Electronic Properties of Semiconductors by Monolayer Doping — •Peter Thissen¹ and Roberto Longo² — ¹Karlsruher Institut für Technologie (KIT), Institut für Funktionelle Grenzflächen (IFG), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen, Germany — ²Department of Materials Science & Engineering, The University of Texas at Dallas, Richardson, Texas 75080, USA

The control of the electronic properties of semiconductors is primarily achieved through doping. Within this context, new techniques such as Monolayer Doping (MLD) represent a substantial improvement towards surface doping with atomic and specific doping dose control at the nanoscale. Here, we address the key questions that will ultimately allow to optimize the scalability of the MLD process. First, we show that dopant coverage control cannot be achieved by simultaneous reactions of several group-V-elements, but stepwise reactions make it possible. Second, using ab initio molecular dynamics, we investigate the thermal decomposition of the molecular precursors, together with the stability of the corresponding binary and ternary dopant oxides, prior to the dopant diffusion into the semiconductor surface. Finally, the effect of the coverage and type of dopant on the electronic properties of the semiconductor is also analyzed. Furthermore, the atomistic characterization of the MLD process raises unexpected questions regarding possible crystal damage effects by dopant exchange with the semiconductor ions, or the final distribution of the doping impurities within the crystal structure.