Dresden 2017 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 39: Oxide and Insulator Surfaces: Structure, Epitaxy and Growth II
O 39.6: Vortrag
Dienstag, 21. März 2017, 15:15–15:30, WIL C107
Morphology, structure, topological defects, and electronic effects of epitaxial SnTe topological crystalline insulator films — Omur E. Dagdeviren1, Chao Zhou1, Ke Zou1, •Georg H. Simon1,2, Stephen D. Albright1, Mayra D. Morales-Acosta1, Xiaodong Zhu1, Frederick J. Walker1, Charles H. Ahn1, Udo D. Schwarz1, and Eric I. Altman1 — 1Center for Research on Interface Structures and Phenomena (CRISP), Yale University, New Haven, CT 06520, USA — 2Current Address: Fritz-Haber-Institut der Max-Planck-Gesellschaft, 14195 Berlin, Germany
SnTe has been researched in the past as an ingredient in phase change materials and in the context of infrared detection and thermoelectrics [1]. Moreover, it gained renewed attention for properties of a topological crystalline insulator (TCI), which have been predicted [2,3] and experimentally confirmed for SnTe(100) and (111) surfaces [4]. However, its enormous lattice constant should lead to large misfit epitaxy on most substrates. The resulting defects may or may not be detrimental or even beneficial for TCI properties and their applications. Here we present a surface science characterization of thick, ex situ grown, SnTe(001) films on insulating SrTiO3(001) [5]. STM and electron diffraction data show morphology and surface structure in detail. Furthermore the growth and post-processing related defect structure as well as surface standing waves are revealed. [1] Zhang et al.: PNAS 110 (2013) 13261. [2] Fu: PRL 106 (2011) 106802. [3] Hsieh et al.: Nat. Comm. 3 (2012) 982. [4] Tanaka et al.: Nat. Phys. 8 (2012) 800. [5] Dagdeviren et al.; Adv. Mater. Interfaces, in press.