Dresden 2017 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 44: Metal Substrates: Structure, Epitaxy and Growth
O 44.7: Poster
Dienstag, 21. März 2017, 18:30–20:30, P1A
Low temperature bias assisted RF-sputtering process for heteroepitaxial growth of iridium on various oxide substrates — •Frank Meyer1, Eduard Reisacher1, Johannes Preußner1, Andreas Graff2, Alexander Fromm1, Lukas Gröner1, and Frank Burmeister1 — 1Fraunhofer-Institut für Werkstoffmechanik IWM, Freiburg i. Br., Germany — 2Fraunhofer-Institut für Mikrostruktur von Werkstoffen und Systemen IMWS, Halle, Germany
By using the so called bias enhanced nucleation process followed by a growth process in an ellipsoidal reactor, artificial CVD-diamond can be grown on many refractory metal surfaces. The fabrication of single crystal diamond, however requires well-oriented (mostly [100]) substrates with lattice constants close to diamond and high chemical and thermal stability. A suitable candidate is iridium, deposited e.g. on A-plane sapphire [1], yttrium stabilized zirconia (YSZ) (100) [2] or lanthanum aluminate (LaAlO3) (100). In related works, we've already established a low-temperature deposition process for the hetereroepitaxial growth of iridium (100) on A-plane sapphire. In this study we investigated the influence of different oxidic substrate surfaces on the iridium film characteristics with respect to surface morphology and growth behavior by characterizing the surface morphology, crystallinity, and growth defects of iridium on LaAlO3 and YSZ with X-ray diffraction, electron backscattering diffraction, and high resolution transmission electron microscopy. [1] Z. Dai et al., Appl. Phys. Lett., 82, 3847 (2003), [2] S. Gsell et al., Appl. Phys. Lett., 84, 4541 (2004)