Dresden 2017 – scientific programme
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O: Fachverband Oberflächenphysik
O 46: Electronic Structure of Surfaces: Spectroscopy, Surface States
O 46.16: Poster
Tuesday, March 21, 2017, 18:30–20:30, P1A
Preparation and Characterization of Sub-Monolayer Ge on Cu — •Thomas Kotzott, Wei Li, and Martin Wenderoth — IV. Physikalisches Institut, Georg-August-Universität Göttingen, Göttingen, Germany
Semiconductor growth on metals is of interest for designing and producing devices in semiconductor-based electronics. In this study, we have prepared different copper-germanium surface structures. Clean Cu single crystal surfaces are fabricated by sputtering and annealing and characterized by LEED and AES. Sub-monolayer Ge is deposited at 100K using electron beam evaporators in-situ under UHV conditions at a base pressure of p < 10−10 mbar. The Ge/Cu surfaces are investigated by low temperature (6K) scanning tunneling microscopy. We present topography data and the corresponding electronic structure obtained by scanning tunneling spectroscopy as well as thermovoltage measurements. The scattering processes at the Cu surface are examined, finally aiming for the scattering properties of a single semiconductor impurity within the bulk metal using dilute alloys.