Dresden 2017 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 87: Metal Substrates: Structure, Epitaxy and Growth

O 87.7: Vortrag

Donnerstag, 23. März 2017, 12:15–12:30, WIL C307

Low temperature bias-assisted RF-sputtering process for heteroepitaxial growth of iridium (100) on sapphire (11-20)Frank Meyer1, Eduard Reisacher1, Johannes Preußner1, Andreas Graff2, Alexander Fromm1, Lukas Gröner1, and •Frank Burmeister11Fraunhofer-Institut für Werkstoffmechanik IWM, Freiburg i. Br., Germany — 2Fraunhofer-Institut für Mikrostruktur von Werkstoffen und Systemen IMWS, Halle, Germany

Heteroepitaxially grown iridium (100) on sapphire (11-20) is one of the most promising systems for large scale heteroepitaxial diamond growth [1]. However, due to the high melting point of iridium (2466°C) and low adatom mobility, in various e-beam or sputter deposition experiments, epitaxial growth has only been observed at substrate temperatures above 600°C. Very recently, Tolstova et al. [2] were able to significantly reduce the temperature necessary for growing epitaxial platinum and gold films on MgO by using RF-sputtering with an additionally applied substrate bias. In this study we investigated the influence of the additional substrate bias on the growing Ir film. Crystallinity and morphology were characterized using X-ray diffraction and electron backscattering diffraction. We found that in the first seconds of the deposition process, an additional substrate bias creates a thin iridium seeding layer, which enables epitaxial growth of iridium (100) on sapphire (11-20) already at temperatures slightly above 300°C. [1] Z. Dai et al., Appl. Phys. Lett., 82, 3847 (2003) [2] Y. Tolstova et al. Scientific Reports 6, 23232, (2016)

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