Dresden 2017 – wissenschaftliches Programm
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TT: Fachverband Tiefe Temperaturen
TT 10: Spintronics II (joint session DS, HL, MA, TT, organized by HL)
TT 10.7: Vortrag
Montag, 20. März 2017, 16:45–17:00, POT 151
An origin of large spin accumulation voltage in non-degenerate Si MOSFET at room temperature — •Masashi Shiraishi1, Yuichiro Ando1, Takayuki Tahara1, and Hayato Koike2 — 1Kyoto University, Japan — 2TDK Corporation, Japan
Si spintronics has been attracting much attention in a decade, and recent success of room temperature operation of Si spin MOSFET [1] can accelerate its progress. In this presentation, a large spin accumulation voltage of more than 1.5 mV at 1 mA measured in non-degenerate Si-based lateral spin valves (LSVs) at room temperature is introduced [2]. The notable is that this is the largest spin accumulation voltage measured in semiconductor-based LSVs in our best knowledge. The modified spin drift-diffusion model, which successfully accounts for the spin drift effect, explains the large spin accumulation voltage and significant bias-current-polarity dependence. The model also shows that the spin drift effect enhances the spin-dependent magnetoresistance in the electric two-terminal scheme. This finding provides a useful guiding principle for spin metal-oxide-semiconductor field-effect transistor operations. The detail of experiments and theoretical considerations will be introduced in the presentation. Reference:[1] T. Tahara, M. Shiraishi et al., APEX8, 113004 (2015). [2] T. Tahara, M. Shiraishi et al., Phys. Rev. B93, 214406 (2016).