Dresden 2017 – wissenschaftliches Programm
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TT: Fachverband Tiefe Temperaturen
TT 27: Focus Session: Topological Insulators on Coupled Quantum Wells (joint session DS, HL, MA, O, TT, organized by HL)
TT 27.5: Hauptvortrag
Dienstag, 21. März 2017, 11:30–12:00, POT 151
Transport and capacitance in HgTe-based topological insulators — •Dieter Weiss — Universität Regensburg, D-93040 Regensburg, Germany
The discovery of 2D and 3D topological insulators (TI) has opened an exciting area of condensed matter physics. It has been theoretically predicted and recently shown experimentally [1-3] that strained HgTe films constitute a 3D TI with a high-mobility 2D-electron gas enclosing the insulating bulk of HgTe. Here, I will show both transport and capacitance data obtained from different metal-oxide HgTe devices. Using top gates we can tune the gate voltage and thus explore quantum transport and quantum capacitance at different positions of the Fermi level EF. Experiments on mesoscopic structures like nanowires and antidot superlattices made from strained 3D-HgTe films provide further evidence of the peculiar nature of topological surface states.
Work done in collaboration with D. A. Kozlov, D. Bauer, J. Ziegler, H. Maier, R. Fischer, S. Weishäupl, Z. D. Kvon, N. N. Mikhailov, and S. A. Dvoretsky
[1] C. Brüne et al., Phys. Rev. Lett. 106, 126803 (2011)
[2] D. A. Kozlov et al., Phys. Rev. Lett. 112, 196801 (2014)
[3] D. A. Kozlov et al., Phys. Rev. Lett. 116, 166802 (2016)