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TT: Fachverband Tiefe Temperaturen
TT 63: Spincaloric Transport (joint session MA, TT, organized by MA)
TT 63.7: Talk
Thursday, March 23, 2017, 11:15–11:30, HSZ 403
Thermally Induced Spin Transfer Torque on MgO-based magnetic tunnel junctions using microresonators — •Hamza Cansever1,2, Ciaran Fowley1, Rysard Narkovicz1, Ewa Kowalska1,2, Yuriy Aleksandrov2, Oguz Yildirim1, Aleksandra Titova1,2, Kilian Lenz1, Jürgen Lindner1, Jürgen Fassbende1, and Alina M. Deac1 — 1Helmholtz Zentrum Dresden Rossendorf Institute of Ion Beam Physics and Materials Research — 2TU Dresden Institute of Solid State Physics
Magnetic tunnel junctions have been commonly used in spintronics applications, such as magnetic random access memory (M-RAM), spin transfer torque RAM (STT-RAM) and hard disc drive (HDD) because of high storage capacity. A spin polarized current flowing through a ferromagnetic layer can exert spin-transfer-torque (STT) on the local magnetization. When we apply thermal gradient across the junction we can induce what is called thermal spin transfer torque (T-STT). In this study, the microresonator FMR technique is used in order to analyze how the ferromagnetic resonance signal corresponding to the free layer of an in-plane MgO-based tunnel junction device is modified in the presence of a temperature gradients across the barrier. Details of resonator fabrication and preliminary measurements are presented. This work is supported by DFG-SPP1538.