Mainz 2017 – wissenschaftliches Programm
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Q: Fachverband Quantenoptik und Photonik
Q 40: Poster: Quantum Optics and Photonics II
Q 40.31: Poster
Mittwoch, 8. März 2017, 17:00–19:00, P OG2
Precise optical bulk and surface absorption measurements in high purity silicon. — •Johannes Dickmann1,2,3, Stefanie Kroker1,2, Carol Bibiana Rojas Hurtado1,2, René Glaser3, and Ronny Nawrodt3 — 1Physikalisch-Technische Bundesanstalt — 2Technische Universität Braunschweig — 3Friedrich-Schiller-Universität Jena
Silicon is a promising material for high-precision metrological applications such as gravitational wave detectors and frequency stabilized laser systems for the realization of optical clocks. In order to maximize the performance of such experiments, the optical absorption of all involved elements should be as small as possible. This sets high demands to the purity of the utilized silicon material. For quantitative statements on the optical performance it is essential to measure the surface and bulk absorption separately. Photothermal deflection spectroscopy is a powerful tool for these measurements. In this contribution, theoretical and experimental aspects of such high resolution measurements are discussed. Numerical calculations are presented which help to estimate the influence of all parameters and thereby to optimize the experimental setup. We present results of the following measurements: Bulk absorption of silicon samples with variable doping gradients, room temperature surface absorption in dependence of surface roughness as well as temperature dependent surface and bulk absorption down to 4 K. The developed experimental setup is very sensitive to material disturbances. Therefore, an application in quality control of 2D (thin films) and 3D (bulk materials) is possible.