Münster 2017 – wissenschaftliches Programm
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T: Fachverband Teilchenphysik
T 67: Pixeldetektoren 3
T 67.8: Vortrag
Dienstag, 28. März 2017, 18:30–18:45, VSH 116
Design of a High Granularity - Low Power Monolithic Pixel Sensor in 180nm CMOS Technology — •Konstantinos Moustakas1, Tianyang Wang1, Ivan Berdalovic2, Thanushan Kugathasan2, Walter Snoeys2, Tomasz Hemperek1, Hans Krüger1, and Norbert Wermes1 — 1Physikalisches Institut der Universität Bonn, Nussallee 12, Bonn, Germany — 2CERN, Geneva, Switzerland
Active monolithic CMOS sensors (DMAPS) are emerging as a promising alternative for the HL-LHC upgrade. A low capacitance, high granularity DMAP sensor is currently being developed in a commercial TowerJazz 180nm process. The technology incorporates a p-epitaxial high resistivity substrate, full CMOS circuitry by deep p-well isolation and TID durability by usage of a thin gate oxide. The pixel pinch is smaller than 50μm, facilitating very high efficiency under the deep p-well through process modification and backbiasing to achieve full depletion. Instead of including the electronics inside the collection well, a separate n-well collection diode is implemented. The extremely small detector capacitance significantly reduces input noise and allows the use of a low power ALPIDE-like analog front-end. The front end circuit is modified and optimized for ToT enablement and the hit information is read-out by a token-based column drain architecture. A leakage current compensation scheme is also proposed to improve performance, allowing for independent input reset current setting from the collection diode leakage. Simulation results demonstrate high performance in terms of very low ENC and threshold dispersion (<20e)