Berlin 2018 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
CPP: Fachverband Chemische Physik und Polymerphysik
CPP 14: Interfaces and Thin Films I
CPP 14.10: Vortrag
Montag, 12. März 2018, 17:30–17:45, C 264
Preparation and Characterization of Pentacene Thin Films on SiC Graphene — •Martin Hodas1, Peter Siffalovic2, Giuliano Duva1, Berthold Reisz1, Michal Bodik2, Peter Nadazdy2, Alexander Hinderhofer1, Alexander Gerlach1, Eva Majkova2, and Frank Schreiber1 — 1Universität Tübingen, Germany — 2Slovak Academy of Sciences, Slovakia
We report on the results of thin pentacene deposition on epitaxially grown graphene on SiC, focusing on growth kinetics, molecular orientation, structure and lattice parameters of pentacene on defect-free graphene. Epitaxially grown graphene on SiC possesses a high-quality crystal structure, essentially without grain boundaries. Pentacene thin films exhibit high structural order and relatively high field-effect mobility. The optical and electronic properties of pentacene are highly anisotropic. The films have been monitored in-situ with real-time X-ray scattering techniques (GISAXS, GIWAXS), ex-situ with atomic force microscopy (AFM) and polarized Raman measurements. Epitaxial growth of pentacene on graphene yields a lying-down molecular assembly that shows a six-fold symmetry with respect to graphene crystallographic orientation[1]. Surprisingly, the theoretical position of the 001 diffraction peak for the single crystal phase matches our thin film measurements. Temporal evolution of Rg reveals maximum value at 60 nm for 3 different substrate temperatures (320, 330, 350K).
[1] L. Wi Hyoung et al. Surface-Directed Molecular Assembly of Pentacene on Monolayer Graphene for High-Performance Organic Transistors. JACS 2011, (133), 4447.