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Berlin 2018 – scientific programme

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DS: Fachverband Dünne Schichten

DS 17: Poster Session I

DS 17.19: Poster

Tuesday, March 13, 2018, 18:15–20:15, Poster B

Electrical properties of unipolar devices based on amorphous zinc oxynitride — •Anna Reinhardt, Holger von Wenckstern, and Marius Grundmann — Universität Leipzig, Felix-Bloch-Institut für Festkörperphysik, Semiconductor Physics Group

Amorphous zinc oxynitride (a-ZnON) was demonstrated to be a promising high-mobility semiconductor for low-temperature fabricated, high-performance thin-film transistors [1–3]. Up to now, only metal-insulator-semiconductor field-effect transistors based on a-ZnON were reported.

Here, we present our results on metal-semiconductor field-effect transistors (MESFETs) using reactively sputtered platinum gate-contacts to control the current flow in the sputter deposited a-ZnON channel. On/off ratios of 105 and saturation mobilities of about 50 cm2V−1s−1 are achieved. Furthermore, the electrical properties of the Schottky gate diode were analyzed by means of temperature-dependent current-voltage measurements.

[1] Y. Ye et al., J. Appl. Phys. 106, 074512 (2009)

[2] H.-S. Kim et al., Sci. rep. 3, 1459 (2013)

[3] A. Reinhardt et al., Phys. Status Solidi A 213 (7), 1767 (2016)

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