Berlin 2018 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 17: Poster Session I
DS 17.79: Poster
Dienstag, 13. März 2018, 18:15–20:15, Poster B
Plasma-assisted atomic layer deposition of Cobalt — •Mihir Dass1, Sara Azimi1, Haojie Zhang2, Bodo Fuhrmann3, and Stuart Parkin1 — 1Max Planck Institute of Microstructure Physics — 2Fraunhofer Institute for Microstructure of Materials and Systems — 3Martin Luther University Halle-Wittenberg
Atomic layer deposition (ALD) is a vapor phase technique capable of producing thin films of a variety of materials. Based on sequential, self-limiting reactions, ALD offers exceptional conformality on three-dimensional and patterned structures, thickness control at nearly monolayer level, and tunable film composition. With these advantages, ALD has emerged as a powerful tool for many industrial and research applications. Although some materials like certain metal oxides (Aluminium Oxide and Zinc Oxide) have received tremendous attention, deposition of pure metals is still in its infancy. We have shown plasma-assisted ALD deposition of Cobalt and are developing new processes for deposition on various substrates (unpublished data). We assess the deposition quality through XPS, AFM, XRD and TEM. Successful deposition of such stacks will open up possibilities to include new materials and develop novel electronic and spintronic devices.