Berlin 2018 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 20: 2D materials: Chalcogenides I (joint session HL/DS)
DS 20.5: Vortrag
Mittwoch, 14. März 2018, 10:30–10:45, A 151
Tunable electron-phonon interaction in MoS2 — •Max Bommert1, Bastian Miller1,2, Alexander Holleitner1,2, and Ursula Wurstbauer1,2 — 1Walter Schottky Institute and Physics Department, Technical University of Munich, Am Coulombwall 4a, 85748 Garching, Germany — 2Nanosystems Initiative Munich (NIM), Schellingstr. 4, 80799 Munich, Germany
Transition metal dichalcogenides such as MoS2 are of current interest for optoelectronic application, as well as for studying fundamental aspects of light-matter interaction and excitonic properties in strictly two-dimensional semiconductors. We explore the impact of the charge carrier density on the electron phonon interaction by non-resonant and resonant Raman spectroscopy. We utilize MoS2 field effect structures with solid electrolyte and liquid ion gates, enabling a change of the 2D electron density by more than two orders of magnitude [1]. We report unusual polarization and charge carrier dependent behavior in resonant Raman spectra that points towards strong electron-phonon coupling in MoS2 and the importance of excitonic phenomena [2]. Alongside we investigate temperature dependent phase transitions through changes in transport and optical properties.
[1] Miller et al., APL 106, 122103 (2015)
[2] Miller, Bommert et al. (2018)