Berlin 2018 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

DS: Fachverband Dünne Schichten

DS 23: Lithography II: Focused Electron Beam Induced Processing: 3D Nano-Printing for Material Science (Focussed Session): Afternoon Session (joint session DS/KFM)

DS 23.2: Vortrag

Mittwoch, 14. März 2018, 15:15–15:30, H 2032

Focused Electron Beam Induced Deposition with halogenated organometallic Ru compounds — •Jakub Jurczyk1,2, Christopher Brewer3, Olivia Hawkins3, Czeslaw Kapusta2, Lisa McElwee-White3, and Ivo Utke11Empa - Swiss Federal Laboratories for Materials Science and Technology,Thun, Switzerland — 2AGH University of Science and Technology in Krakow, Kraków, Poland — 3University of Florida, Gainesville, USA

Focused Electron Beam Induced Deposition (FEBID) studies of potential organometallic halogenated ruthenium precursors were performed. By now the best Ru FEBID result was achieved using bis(ethylcyclopentyldienyl) ruthenium(II) [1] giving a C:Ru ratio of 9:1 (10 at.% Ru) in as deposited material. Recent gas phase [2] and surface science studies [3] selected halogenated organometallic compounds as potential FEBID precursors. In this contribution we present three of them: n-allyl-Ru(CO)3Cl, n-allyl-Ru(CO)3Br, n-allyl-Ru(CO)3I. The deposit metal content was investigated as function of growth regimes and writing strategies for vertical and planar structures. First promising results of up to 20 at.% of Ru in as deposited material were achieved. Electrical properties of as deposited and annealed nanowires will be presented.

[1] J.H. Noh et al., App. Phys. A, 117, (2014), 1705-1713 [2] R. M. Thorman et al., Phys. Chem. Chem. Phys, 19, (2017), 13264-13271 [3] Spencer et al., J. Phys. Chem. C, 119, (2015), 15349-15359

100% | Mobil-Ansicht | English Version | Kontakt/Impressum/Datenschutz
DPG-Physik > DPG-Verhandlungen > 2018 > Berlin