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Berlin 2018 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 23: Lithography II: Focused Electron Beam Induced Processing: 3D Nano-Printing for Material Science (Focussed Session): Afternoon Session (joint session DS/KFM)

DS 23.7: Vortrag

Mittwoch, 14. März 2018, 16:45–17:00, H 2032

Dedicated AS-ALD micro-reactor for FEBID nano-templates — •Peter Gruszka, Giorgia Di Prima, Roland Sachser, and Michael Huth — Goethe Universität, Max-von-Laue-Str. 1, 60438 Frankfurt am Main, Germany

In recent years, conventional methods of nano-structuring are slowly reaching their lower limits. A novel bottom-up approach emerged[1], which combines focused electron beam induced deposition(FEBID) and area-selective atomic layer deposition(AS-ALD). FEBID is a serial, bottom-up and direct-write technique yielding structures with superior lateral resolution (< 10 nm), but with poor material quality. In contrast, ALD and especially AS-ALD are parallel and bottom-up approaches with exceptional thickness control resulting in high purity sub-nano films.

We successfully performed the combined FEBID-ALD process in our Nova 600 Dual Beam scanning electron microscope.[2] The ALD experiments were conducted on purified platinum FEBID-nanostructures[3] which were monitored via in-situ conductance measurements. For further investigation and optimization, we built a dedicated AS-ALD micro-reactor.

[1] Mackus, et al., J. Appl. Phys 107 (2010), 116102

[2] Di Prima, et al., Nano Futures 1(2) (2017), 25005

[3] Sachser, et al., ACS Appl. Mater. Interfaces 6 (2014), 15868

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