Berlin 2018 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
DS: Fachverband Dünne Schichten
DS 28: 2D materials: Chalcogenides II (joint session HL/DS)
DS 28.13: Vortrag
Donnerstag, 15. März 2018, 12:45–13:00, A 151
Impact of layer separation on the optoelectronic properties of van der Waals heterostructures — •Malte Hartmann1, Matthias Florian1, Alexander Steinhoff1, Frank Jahnke1, Julian Klein2, Alexander Holleitner2, Jonathan Finley2, Tim Wehling1, Michael Kaniber2, and Christopher Gies1 — 1Institut für theoretische Physik, Bremen, Deutschland — 2Walter Schottky Institut, München, Deutschland
Dielectric screening plays an important role in the field of atomically thin transition-metal dichalcogenides (TMDs) and van der Waals heterostructures consisting of stacked 2D-materials. In each layer the field lines of the Coulomb interaction are screened by the adjacent material, which reduces the single-particle band gap as well as binding energies of exciton complexes and can be used to tailor the optoelectronic properties. By combining an electrostatic model for a dielectric hetero-multi-layered environment with semiconductor many-particle methods, we demonstrate that the electronic and optical properties are sensitive to the interlayer distances on the atomic scale. Spectroscopical measurements in combination with a direct solution of a three-particle Schrödinger equation reveal trion binding energies that correctly predict recently measured interlayer distances.